王占国.硅微电子技术物理极限对策探讨[J].中国科学院院刊,2007,(6):480-485.
硅微电子技术物理极限对策探讨
Discussion on Countermeasures for Physical Limit of Silicon Microelectronic Technology
硅微电子技术物理极限对策探讨
Discussion on Countermeasures for Physical Limit of Silicon Microelectronic Technology
作者
王占国
中国科学院半导体研究所 北京100083
Wang Zhanguo
Key Lab.of Semiconductor Materials Science,Institute of Semiconductors,CAS,100083 Beijing
中国科学院半导体研究所 北京100083
Wang Zhanguo
Key Lab.of Semiconductor Materials Science,Institute of Semiconductors,CAS,100083 Beijing
中文关键词
硅材料;微/纳米电子技术;分子电子技术;量子信息技术;光计算技术
英文关键词
silicon material;micro/nano-electronic technology;molecular electronic technology;quantum information technology;photo-computing technology
中文摘要
根据国际半导体技术蓝图(ITRS)发布的未来半导体工艺技术预测,2016年世界集成电路主流工艺线宽为22纳米,2022年达到10纳米。届时,以硅为基础的微电子技术发展所遵循的摩尔定律将不再适用;为此,必须发展基于全新原理的新技术,以满足人类不断增长的对信息量的需求。本文首先介绍硅材料国内、外的发展现状与趋势,进而讨论后摩尔时代的微电子技术发展可能采取的对策,最后展望基于全新原理的纳米电子、分子电子、光计算和量子信息技术的发展前景。
英文摘要
According to the prediction of semiconductor technology of International Technology Roadmap of Semiconductors(ITRS),the characteristic line width of silicon ULSI will reach at 22 nanometer in 2016,then 10 nanometer in 2022.At the appointed time Silicon(Si)-based microelectronic technology will meet its physical limitation,in other words Si microelectronic technology following Moore low will be no longer applicable.Therefore,it is necessary to develop new technology based on completely new principle,satisfying continuously increased requirement of mankind for information.In this paper,the present status and trend of Si materials development both in China and the World are introduced first.Then the countermeasures likely to be taken for Si microelectronic technology after Moore ear are discussed in detail.Finally the expectation of development foreground for nano-electronics,molecular electronics,quantum information technology and optical computer based on completely new principle are given.
